| PART |
Description |
Maker |
| W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate)
8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| M14D2561616A-2.5BG M14D2561616A-3BG |
4M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8 高性能2.5米8 DDR SDRAM银行X 2Mbit的8
|
Mosel Vitelic, Corp.
|
| W9425G6JH |
4M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6DH |
4M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9464G6IH |
1M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9425G8EH |
8M X 4 BANKS X 8 BITS DDR SDRAM
|
Winbond
|
| W9425G8EH |
8M × 4 BANKS × 8 BITS DDR SDRAM
|
Winbond
|
| W9464G6IH |
1M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9825G6DH-6C |
4M 4 BANKS 16 BITS SDRAM 16M X 16 DDR DRAM, 5.4 ns, PDSO54
|
Winbond Electronics, Corp.
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
